Al L2,3 near edge structure captures the dopant activation and segregation in Al-doped ZnO films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solar Energy Materials and Solar Cells Année : 2022

Al L2,3 near edge structure captures the dopant activation and segregation in Al-doped ZnO films

J. Ghanbaja
S. Migot
S. Cuynet
J.F. Pierson
David Horwat
Connectez-vous pour contacter l'auteur

Résumé

Aluminum-doped zinc oxide (AZO) films have been synthesized using reactive high power impulse magnetron sputtering (HiPIMS) in a wide range of Al contents, 0.6-14.7 at.%. The film structure and microstructure investigated by X-ray diffraction and transmission electron microscopy evolves from nanocrystalline columnar film towards ultrafine nanocrystalline films of wurtzite ZnO structure upon increasing the Al content. Electrical properties measured by 4-point probe and Hall effect setups revealed that effective doping maybe achieved up to 3 at.% Al by using HiPIMS. Most importantly, optical transmittance and electronic structure measurements at the Al L 2,3 of electron energy loss near edge structure (ELNES) contain signatures of dopant activation, and dopant segregation that may serve to investigate on the origin of electrical properties degradation and to optimize the electrical properties of AZO films.
Fichier principal
Vignette du fichier
Article ELNES_V2.pdf (623.28 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03813233 , version 1 (14-10-2022)

Identifiants

Citer

C. Fadel, J. Ghanbaja, S. Migot, S. Cuynet, J.F. Pierson, et al.. Al L2,3 near edge structure captures the dopant activation and segregation in Al-doped ZnO films. Solar Energy Materials and Solar Cells, 2022, 246, pp.111880. ⟨10.1016/j.solmat.2022.111880⟩. ⟨hal-03813233⟩
15 Consultations
40 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More