A single hole spin with enhanced coherence in natural silicon - Archive ouverte HAL Access content directly
Journal Articles Nature Nanotechnology Year : 2022

A single hole spin with enhanced coherence in natural silicon

Tristan Meunier

Abstract

Abstract Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin–orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 μs, exceeding by an order of magnitude existing values reported for hole spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin–orbit coupling in isotopically purified silicon. Our finding enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.

Dates and versions

hal-03810390 , version 1 (11-10-2022)

Identifiers

Cite

N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. Michal, et al.. A single hole spin with enhanced coherence in natural silicon. Nature Nanotechnology, 2022, 17, pp.1072-1077. ⟨10.1038/s41565-022-01196-z⟩. ⟨hal-03810390⟩
53 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More