Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells - Archive ouverte HAL
Article Dans Une Revue Solar Energy Materials and Solar Cells Année : 1999

Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

Carlos L. Garrido Alzar
  • Fonction : Auteur
  • PersonId : 1237671
  • IdHAL : clgalzar
D. Stolik
  • Fonction : Auteur
J. Rodríguez
  • Fonction : Auteur
A. Morales
  • Fonction : Auteur

Résumé

In this paper the minority carrier lifetime (tau) in the base region of an n(+)/p silicon solar cell is calculated. The open circuit voltage decay method is employed. The influence of carrier recombination in the space charge region is considered through an interface recombination velocity, S-i. An analytical expression for tau is obtained and its value for one particular case is reported.

Dates et versions

hal-03801522 , version 1 (06-10-2022)

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Citer

Carlos L. Garrido Alzar, D. Stolik, J. Rodríguez, A. Morales. Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells. Solar Energy Materials and Solar Cells, 1999, 57 (3), pp.239-247. ⟨10.1016/s0927-0248(98)00174-3⟩. ⟨hal-03801522⟩
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