Three-dimensional laser writing deep inside Gallium Arsenide
Résumé
Volume laser inscription (VLI) inside materials have been widely investigated because of its unique possibility to create precise and functional 3D microstructures under the surface. Recent years witness an increasing interest of shifting similar applications from dielectric materials to more challenging semiconductors that have different material properties (Fig. 1a). In particular, much stronger nonlinear propagation effects are expected that can strongly distort the laser focus conditions when working deep inside the materials (Fig. 1b) [1]. Recently, tremendous efforts have concentrated on silicon (Si), the basis material for electronics industry. However, there are so far very few works on the specificity of other important semiconductors, especially Gallium Arsenide (GaAs) which also has important applications in electronics sector such as integrated circuits, light-emitting diodes and photovoltaic cells. GaAs has very different properties compared to Si. GaAs exhibit a direct bandgap of 1.44 eV whereas Si has an indirect bandgap of 1.12 eV. The nonlinear refractive index of GaAs is also more than 5 times higher than the one for Si. These and other differences must lead to significant differences for the VLI conditions.
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