N°Spécial De Revue/Special Issue Materials Science Forum Année : 2022

Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration

Résumé

In view of obtaining a step bunched morphology on large 4H-SiC surfaces, a sandwich configuration is investigated. A piece of silicon is melted between two 4H-SiC 4° off wafers, allowing a better spreading of the liquid than a Si drop approach. This successfully leads to highly step-bunched surfaces, though with irregular steps. The most regular step and terrace stuctures were found to be the result of epitaxial growth via a dissolution-precipitation process occuring from the edges to the center of the wafers. This is probably caused by radio-frequency induced electromagnetic convection within liquid Si. This process is quenched when using smaller liquid thickness.

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Dates et versions

hal-03800141 , version 1 (06-10-2022)

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Yann Jousseaume, François Cauwet, Gabriel Ferro. Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration. Materials Science Forum, 1062, pp.8 - 12, 2022, ⟨10.4028/p-8302i1⟩. ⟨hal-03800141⟩
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