Engineering Transport Properties in Interconnected Enargite-Stannite type Cu2+xMn1-xGeS4 Nanocomposites
Résumé
Understanding the mechanism that connects heat and electron transport with crystal structures and defect chemistryis fundamentalto develop materials with thermoelectricproperties.In this work, we synthesized a series of self-doped compounds Cu2+xMn1-xGeS4through Cu forMn substitution. Using a combination of powderX-ray diffraction, high resolution transmission electron microscopy and precession-assisted electron diffraction tomography, we evidence that the materialsarecomposed of interconnected enargite-and stannite-type structures, via the formation of nanodomainswith a high density of coherent interfaces. By combining experiments with ab-initio electron and phononcalculations, we discuss the structure–thermoelectric properties relationships and clarify the interesting crystal chemistry in this system. We demonstrate that excess Cu+substituted for Mn2+dope holes into the top of the valence band, leading to a remarkable enhancement of the power factor and figure of merit ZT.
Domaines
Chimie
Fichier principal
Pavan Kumar et al. - 2022 - Engineering Transport Properties in Interconnected.pdf (6.12 Mo)
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anie202210600-s1-supporting_information_cu2mnges4_v9-modpb.pdf (8.55 Mo)
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