Optoelectronic THz mixer based on iron-doped InGaAs in a plasmonic microcavity
Abstract
We present an optoelectronic THz mixer based on irondoped InGaAs integrated into a plasmonic microcavity. The measured conversion loss is as low as ∼30 dB at 300 GHz, which constitutes a 30 dB improvement in comparison to state-of-the-art photoconductors without a plasmonic microcavity. In particular for application as receivers in high-data rate wireless telecom the presented design is very promising.