Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Crystals Année : 2022

Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics

Mircea Modreanu
Ian Povey
Jun Lin
  • Fonction : Auteur
Bruno Lépine
Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban
Philippe Schieffer
Alain Moréac

Résumé

Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS2 material and numerical device simulations of MoS2/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS2/SiO2/Si samples, we found a significant sensitivity of the MoS2 to ambient oxidation. Optical ellipsometry showed a bandgap of 1.87 eV for a 7 monolayer thick MoS2 sample, suitable for the targeted application. Finally, we briefly introduce a device simulation and show that the MoS2/Si heterojunction could lead to a gain in quantum efficiency, especially in the region with short wavelengths, compared with a standard a-Si/c-Si solar cell.
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Dates et versions

hal-03792838 , version 1 (20-01-2023)

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Bienlo Flora Zerbo, Mircea Modreanu, Ian Povey, Jun Lin, Antoine Létoublon, et al.. Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics. Crystals, 2022, 12 (10), pp.1363. ⟨10.3390/cryst12101363⟩. ⟨hal-03792838⟩
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