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Article Dans Une Revue ECS Transactions Année : 2020

Whether Ge-Rich ZrO 2 and Ge-Rich HfO 2 Materials Have Similar Reaction on Annealing Treatment?

Résumé

The properties of Ge-HfO 2 and Ge-ZrO 2 films were studied versus Ge content and annealing temperature by means of Raman scattering, FTIR and X-ray diffraction methods. Ge-HfO 2 films with [Ge]<5 at.% were polycrystalline, whereas higher Ge content stabilized amorphous structure that was stable for T<600°C. The T increase caused the formation of Ge clusters and tetragonal HfO 2 phase. This latter appeared at T=600-670°C, while the Ge clusters crystallized at T=700-800°C. Unlike to Ge-rich HfO 2 films, as-deposited Ge-ZrO 2 films and those annealed at T≤600°C were amorphous. In these films, formation of Ge clusters and their crystallization occurred at T=640-700°C depending on Ge content, whereas ZrO 2 phase crystalized at T=680-700°C that allowed to form Ge nanocrystals in amorphous matrix at T=640-680°C. For T>800°C, the films showed appearance of monoclinic HfO 2 or ZrO 2 phases that was explained by the Ge content decrease via volatile GeO formation. Obtained results supported theoretical prediction of the stability of tetragonal phases in these oxides via Ge doping. However, our results showed also some difference in the phase separation process of Ge-rich HfO 2 and Ge-rich ZrO 2 upon thermal treatment.
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Dates et versions

hal-03792524 , version 1 (30-09-2022)

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Larysa Khomenkova, David Lehninger, Emil Agocs, Peter Petrik, Xavier Portier, et al.. Whether Ge-Rich ZrO 2 and Ge-Rich HfO 2 Materials Have Similar Reaction on Annealing Treatment?. ECS Transactions, 2020, 97 (1), pp.49-60. ⟨10.1149/09701.0049ecst⟩. ⟨hal-03792524⟩
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