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Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm


This paper presents an original design for dual-band dual-mode bandpass filter based on a single grounded patch resonator. It is implemented on BiCMOS 55 nm technology to operate at 180 GHz and 270 GHz. A full control of both bands is possible - thanks to the usage of vias and slots. The grounded vias significantly allow the reduction of the patch resonator realizing an overall size of 0.04 mm2, which is a fundamental aspect for (Bi)CMOS. The achieved results show a good agreement between simulation and measurement results with insertion loss of 4-5 dB in the passband, return loss of 14 dB and relative bandwidths of about 18%.
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hal-03792411 , version 1 (30-09-2022)



Mohammed Wehbi, Marc Margalef-Rovira, Cedric Durand, Sylvie Lepilliet, Ariana L.C. Serrano, et al.. Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm. 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. pp.248-250, ⟨10.1109/IMS37962.2022.9865564⟩. ⟨hal-03792411⟩
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