This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based on stress variables Tj, TPulse Gate Damage % and Esc is proposed. Accuracy and prediction capabilities of ageing-laws have been evaluated and compared. Resulting in suggesting a new ageing-law based on TAl_Top metal-source. This one gives the best fitting accuracy. Finally, the ageing-law based directly on the short-circuit energy Esc appears to have the best in prediction capability.