State creation induced by gate bias stress in unhydrogenated polysilicon TFTs - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 1999

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hal-03776563 , version 1 (13-09-2022)

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B. Tala-Ighil, A. Rahal, K. Mourgues, A. Toutah, L. Pichon, et al.. State creation induced by gate bias stress in unhydrogenated polysilicon TFTs. Thin Solid Films, 1999, 337 (1-2), pp.101-104. ⟨10.1016/S0040-6090(98)01192-4⟩. ⟨hal-03776563⟩
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