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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2022

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Résumé

We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor with source/drain extension by Si implantation has a low contact resistance with RC down to 0.4 Ω⋅mm and a sheet resistance of the implanted layer of 67 Ω /sq. In addition to promising contact performance, transistors with source and drain extension sustain high breakdown voltage (BV) with short dimensions for high-frequency applications. The systematic study of gate–source, gate–drain, and gate length variations shows a new breakdown mechanism for implanted access technology with current flowing beneath the channel leading to an unusual correlation between source–drain spacing and BV. With a conventional titanium-alloyed contact, a punchthrough effect is responsible for the BV. Cross-sectional transmission electron microscopy and secondary ion mass spectroscopy (SIMS) characterizations on both wafers highlight a degradation of the AlGaN-based back-barrier and a high silicon concentration deep into the epitaxial stack on the implanted wafers indicating a way to improve BV with an adapted process flow.
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Dates et versions

hal-03775876 , version 1 (13-09-2022)

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Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, et al.. Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts. IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩. ⟨hal-03775876⟩
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