Article Dans Une Revue Advanced Materials Interfaces Année : 2022

Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H

Résumé

The hexagonal-2H crystal phase of Ge has recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional opto-electronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal-2H Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I3-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed in situ and in real time by means of environmental transmission electron microscopy using chemical vapor deposition. The observations provide the first direct evidence of a step-flow growth of Ge-2H epilayers and reveal the growth-related formation of I3-BSFs during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations, a scenario can be proposed for the nucleation of I3-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for perfect crystalline synthesis of SiGe-2H.

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hal-03775620 , version 1 (12-09-2022)

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Laetitia Vincent, Elham Fadaly, Charles Renard, Wouter Peeters, Marco Vettori, et al.. Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H. Advanced Materials Interfaces, 2022, 9 (16), pp.2102340. ⟨10.1002/admi.202102340⟩. ⟨hal-03775620⟩
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