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High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz

Abstract

Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0 . 45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.
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Dates and versions

hal-03774945 , version 1 (12-09-2022)

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Dennis Maes, Luis Reis, Stijn Poelman, Ewoud Vissers, Vanessa Avramovic, et al.. High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz. CLEO: Science and Innovations 2022, OSA, May 2022, San Jose, United States. pp.SM3K.3, ⟨10.1364/CLEO_SI.2022.SM3K.3⟩. ⟨hal-03774945⟩
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