High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz

Résumé

Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0 . 45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.
Fichier principal
Vignette du fichier
Dennis Maes_CLEO_2022.pdf (135.8 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03774945 , version 1 (18-08-2023)

Identifiants

Citer

Dennis Maes, Luis Reis, Stijn Poelman, Ewoud Vissers, Vanessa Avramovic, et al.. High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz. CLEO: Science and Innovations 2022, OSA, May 2022, San Jose, CA, United States. pp.SM3K.3, ⟨10.1364/CLEO_SI.2022.SM3K.3⟩. ⟨hal-03774945⟩
31 Consultations
20 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More