Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas
Résumé
This article first presents quasi- in situ XPS measurements on Si 3 N 4 and a-Si samples after exposure to an SiF 4 /O 2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to the development of a time-multiplexed process for nanoscale etching. This study clearly shows the possibility to switch from a deposition regime to an etching regime by decreasing the temperature. The threshold temperature between these regimes being different for both materials, it was possible to perform selective etching of Si 3 N 4 over a-Si by wisely choosing the temperature.
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