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Design of a test package for high voltage SiC diodes

Arthur Boutry
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  • PersonId : 1079360
Bruno Lefebvre
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Cyril Buttay
Eric Vagnon


A custom package for SiC diodes is presented. It is designed to accommodate "research-grade" devices (available in small quantities, with large variations in characteristics, and, in our case, poor topside metallisation). It allows testing of the diodes at high voltage (> 5 kV) and high current (600 A). The packaged diodes described here are used as a drop-in replacement for Si diode modules in a double-pulse setup. The packaging design is based on a "sub-package" approach, to achieve high production yield and facilitate exchange of devices failing during the tests. Packaging technologies include silver sintering for the die attach and the use of an original die topside pressing system with spring probes. Experiments validate the concept of the package.


Electric power
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Dates and versions

hal-03772006 , version 1 (07-09-2022)



Arthur Boutry, Bruno Lefebvre, Cyril Buttay, Eric Vagnon, Dominique Planson, et al.. Design of a test package for high voltage SiC diodes. Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩. ⟨hal-03772006⟩
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