Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures
Abstract
A detailed electrical characterization and transistor parameter extraction on 200mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage Vth, low-field mobility μ0, subthreshold swing SS, source-drain series
resistance Rsd) were extracted in linear region using the Y-function and the Lambert-W function methods for gate lengths down to 0.1µm. The Y-function method was also employed in saturation region for the extraction of the saturation velocity. The results indicate that these GaN/Si HEMT
devices demonstrate a very good functionality down to very low temperature with improvement of mobility and subthreshold slope. It was also shown by TLM analysis that the source-drain series resistance Rsd is more limited by the contact resistance than by the 2DEG access region resistance as
temperature is lowered
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