Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on the ACM Model and Look-up Tables - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on the ACM Model and Look-up Tables

Résumé

The race to reduce the size and improve power consumption in new transistor technologies has given rise to design trade-offs that are difficult to address with standard methodologies that require an iterative process. This paper proposes a design methodology based on the ACM model and look-up tables to quickly size a 28 nm FD-SOI RF LNA. The design incorporates different tuning knobs that can be useful for optimizing design constraints and, in particular, adapting the circuit performances at very low temperatures.

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Dates et versions

hal-03765877 , version 1 (31-08-2022)

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Paternité - Pas d'utilisation commerciale

Identifiants

  • HAL Id : hal-03765877 , version 1

Citer

Giovani Crasby Britton Orozco, Estelle Lauga-Larroze, Salvador Mir, Philippe Galy. Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on the ACM Model and Look-up Tables. 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022), May 2022, Udine, Italy. ⟨hal-03765877⟩

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