In this study we analysed halide perovskite films deposited directly on crystalline silicon by means of two set-ups using different operating modes of the surface photovoltage (SPV) methods, i.e., the Kelvin probe force microscopy (KPFM) and the metal-insulator-semiconductor (MIS) technique. The KPFM allowed to visualize surface potential distribution on a microscale while MIS technique allowed to study SPV spectral dependence. We studied wavelength dependent SPV of these samples, which allowed us to effectively vary the probe depth in the sample and discern the contribution from each interface to the overall effect measured under white light illumination. Depending on where the photocarriers are generated, different SPV signals are observed: at the perovskite/Si interface, the signal depends on Si doping type, while at the surface the SPV is always negative indicating downward surface band bending. This is confirmed by analysing SPV phase measured in the AC MIS mode. In addition, distinction between slow and fast processes contributing to measured SPV was possible. It has been observed, that with decreasing the illumination wavelength, the processes causing SPV become slower, which can indicate that high energy photons not only generate electronic photocarriers but can also induce chemical changes with creation of defects or ionic species that also modify the measured SPV.