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              <p>Topological insulator spin-polarized surface states are attractive for spintronic applications, in particular forspin-charge current interconversion, where extremely high conversion efﬁciencies are predicted. However, thecontribution of topologically trivial bulk states is often disregarded although it may play a crucial role in theexperimental results and extracted conversion efﬁciencies. The presence of bulk states at the Fermi level canbe avoided by increasing the gap using the conﬁnement effect appearing as the ﬁlm thickness is reduced. Weaddress this topic by growing Bi 1 − x Sb x thin ﬁlms (2.5–15 nm) by molecular beam epitaxy on InSb, BaF 2 , andSi substrates. The surface electronic band structure is studied by angle-resolved photoemission spectroscopy.Two Bi 1 − x Sb x surface states are observed in the gap for several Sb concentrations and thicknesses, across thetopological insulator phase, scanning x between 7% and 30%. Tight-binding calculations of the surface statesare in good agreement with the experiments, revealing their polarized nature. Surface states are still present atthe  point for the thinnest ﬁlms (2.5 nm), suggesting highly conﬁned polarized states at the surface.</p>
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