SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure
Kevin Froberger
(1, 2)
,
Benjamin Walter
(3)
,
Melanie Lavancier
(1, 2)
,
Romain Peretti
(1, 2)
,
Guillaume Ducournau
(1, 2)
,
Jean-Francois Lampin
(2, 1)
,
Marc Faucher
(1, 4)
,
Stefano Barbieri
(1, 2)
Kevin Froberger
- Fonction : Auteur
- PersonId : 1037978
Melanie Lavancier
- Fonction : Auteur
- PersonId : 1153339
- ORCID : 0000-0002-5910-4141
- IdRef : 259775207
Romain Peretti
- Fonction : Auteur
- PersonId : 22088
- IdHAL : romain-peretti
- ORCID : 0000-0002-1707-7341
- IdRef : 133038580
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Jean-Francois Lampin
- Fonction : Auteur
- PersonId : 742765
- IdHAL : jean-francois-lampin
- ORCID : 0000-0001-8309-8178
- IdRef : 119595680
Marc Faucher
- Fonction : Auteur
- PersonId : 180403
- IdHAL : marc-faucher
- ORCID : 0000-0003-0206-9813
- IdRef : 086294679
Stefano Barbieri
- Fonction : Auteur
- PersonId : 748223
- IdHAL : stefano-barbieri
- ORCID : 0000-0003-4024-8898
- IdRef : 165686669
Résumé
We present a micro-mechanical terahertz (THz) detector fabricated on a silicon on insulator substrate and operating at room-temperature. The device is based on a U-shaped cantilever of micrometric size, on top of which two aluminum half-wave dipole antennas are deposited. This produces an absorption extending over the [Formula: see text] THz frequency range. Due to the different thermal expansion coefficients of silicon and aluminum, the absorbed radiation induces a deformation of the cantilever, which is read out optically using a 1.5 μm laser diode. By illuminating the detector with an amplitude modulated, 2.5 THz quantum cascade laser, we obtain, at room-temperature and atmospheric pressure, a responsivity of [Formula: see text] for the fundamental mechanical bending mode of the cantilever. This yields noise-equivalent-power of [Formula: see text] at 2.5 THz. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 150 kHz bandwidth, with a thermal response time of ∼ 2.5 μs.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure
|
Résumé |
en
We present a micro-mechanical terahertz (THz) detector fabricated on a silicon on insulator substrate and operating at room-temperature. The device is based on a U-shaped cantilever of micrometric size, on top of which two aluminum half-wave dipole antennas are deposited. This produces an absorption extending over the [Formula: see text] THz frequency range. Due to the different thermal expansion coefficients of silicon and aluminum, the absorbed radiation induces a deformation of the cantilever, which is read out optically using a 1.5 μm laser diode. By illuminating the detector with an amplitude modulated, 2.5 THz quantum cascade laser, we obtain, at room-temperature and atmospheric pressure, a responsivity of [Formula: see text] for the fundamental mechanical bending mode of the cantilever. This yields noise-equivalent-power of [Formula: see text] at 2.5 THz. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 150 kHz bandwidth, with a thermal response time of ∼ 2.5 μs.
|
Auteur(s) |
Kevin Froberger
1, 2
, Benjamin Walter
3
, Melanie Lavancier
1, 2
, Romain Peretti
1, 2
, Guillaume Ducournau
1, 2
, Jean-Francois Lampin
2, 1
, Marc Faucher
1, 4
, Stefano Barbieri
1, 2
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067488 )
- Groupe Photonique THz - IEMN UMR8520 - (Terahertz Photonics)
- France
3
Vmicro SAS
( 1074939 )
- IEMN, 1 Av. Henri Poincaré
59650 Villeneuve d'Ascq
- France
4
NAM6 - IEMN -
Nano and Microsystems - IEMN
( 1066996 )
- Groupe NAM6 - (Micro et Nano Systèmes) - IEMN UMR8520
- France
|
Langue du document |
Anglais
|
Nom de la revue |
|
Volume |
120
|
Numéro |
26
|
Page/Identifiant |
261103
|
Date de publication |
2022-06-27
|
Date de publication électronique |
2022-06-28
|
Audience |
Internationale
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Domaine(s) |
|
Collaboration/Projet |
|
Référence interne |
|
Financement |
|
Mots-clés |
en
Antennas, Terahertz detectors, Silicon-on-insulator, Thermal effects
|
arXiv Id | 2204.03970 |
DOI | 10.1063/5.0095126 |
Origine :
Fichiers produits par l'(les) auteur(s)
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