Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B. Orfao
(1)
,
G. Di Gioia
(2, 3)
,
B. Vasallo
(1)
,
S. Pérez
(1)
,
J. Mateos
(4)
,
Yannick Roelens
(3, 2)
,
E. Frayssinet
(5)
,
Y. Cordier
(5)
,
M. Zaknoune
(2, 3)
,
T. González
(4)
G. Di Gioia
- Fonction : Auteur
- PersonId : 749502
- IdHAL : giuseppe-di-gioia
- ORCID : 0000-0002-6191-0855
- IdRef : 260871303
J. Mateos
- Fonction : Auteur
- PersonId : 757584
- ORCID : 0000-0003-4041-7145
Yannick Roelens
- Fonction : Auteur
- PersonId : 748123
- IdHAL : yannick-roelens
E. Frayssinet
- Fonction : Auteur
- PersonId : 1034940
- ORCID : 0000-0003-3900-8440
Y. Cordier
- Fonction : Auteur
- PersonId : 750365
- IdHAL : yvon-cordier
- ORCID : 0000-0003-3720-9409
- IdRef : 128170794
M. Zaknoune
- Fonction : Auteur
- PersonId : 747548
- IdHAL : mohammed-zaknoune
T. González
- Fonction : Auteur
- PersonId : 757593
- ORCID : 0000-0002-3706-3211
Résumé
A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely, thermionic emission and tunneling components, has been developed and tested by means of current–voltage–temperature measurements in GaN-on-SiC devices. The model addresses both current components and both forward and reverse polarities in a unified way and with the same set of parameters. The values of the main parameters (barrier height, series resistance, and ideality factor) are extracted from the fitting of the forward-bias I–V curves and then used to predict the reverse-bias behavior without any further adjustment. An excellent agreement with the I–V curves measured in the forward bias in the GaN diode under analysis has been achieved in a wide range of temperatures (275–475 K). In reverse bias, at temperatures higher than 425 K, a quasi-ideal behavior is found, but additional mechanisms (most likely trap-assisted tunneling) lead to an excess of leakage current at lower temperatures. We demonstrate the importance of the inclusion of image-charge effects in the model in order to correctly predict the values of the reverse leakage current. Relevant physical information, like the energy range at which most of the tunnel injection takes place or the distance from the interface at which tunneled electrons emerge, is also provided by the model.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
|
Résumé |
en
A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely, thermionic emission and tunneling components, has been developed and tested by means of current–voltage–temperature measurements in GaN-on-SiC devices. The model addresses both current components and both forward and reverse polarities in a unified way and with the same set of parameters. The values of the main parameters (barrier height, series resistance, and ideality factor) are extracted from the fitting of the forward-bias I–V curves and then used to predict the reverse-bias behavior without any further adjustment. An excellent agreement with the I–V curves measured in the forward bias in the GaN diode under analysis has been achieved in a wide range of temperatures (275–475 K). In reverse bias, at temperatures higher than 425 K, a quasi-ideal behavior is found, but additional mechanisms (most likely trap-assisted tunneling) lead to an excess of leakage current at lower temperatures. We demonstrate the importance of the inclusion of image-charge effects in the model in order to correctly predict the values of the reverse leakage current. Relevant physical information, like the energy range at which most of the tunnel injection takes place or the distance from the interface at which tunneled electrons emerge, is also provided by the model.
|
Auteur(s) |
B. Orfao
1
, G. Di Gioia
2, 3
, B. Vasallo
1
, S. Pérez
1
, J. Mateos
4
, Yannick Roelens
3, 2
, E. Frayssinet
5
, Y. Cordier
5
, M. Zaknoune
2, 3
, T. González
4
1
Universidad de Salamanca
( 300499 )
- Patio de Escuelas 1, 37008 Salamanca. España
- Espagne
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
3
ANODE - IEMN -
Advanced NanOmeter DEvices - IEMN
( 1067380 )
- Groupe ANODE (Composants et dispositifs nanométriques) - IEMN LCI - Avenue Poincaré - CS 60069
59650 Villeneuve d'Ascq
- France
4
Departamento de Fisica Aplicada [Salamanca]
( 193585 )
- Universidad de Salamanca Facultad de Ciencias. Plaza de los Caídos, s/n. 37008-Salamanca
- Espagne
5
CRHEA -
Centre de recherche sur l'hétéroepitaxie et ses applications
( 409 )
- Bat. 5 Rue Bernard Grégory 06560 VALBONNE
- France
|
Langue du document |
Anglais
|
Nom de la revue |
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2022-07-28
|
Date de publication électronique |
2022-07-25
|
Volume |
132
|
Numéro |
4
|
Page/Identifiant |
044502
|
Financement |
|
Domaine(s) |
|
Référence interne |
|
Collaboration/Projet |
|
Projet(s) ANR |
|
Mots-clés |
en
Current-voltage characteristic, Schottky barrier diode, Electrical properties and parameters, Semiconductor structures, Thermionic emission
|
DOI | 10.1063/5.0100426 |
Origine :
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