Thermal boundary conductance of CVD-grown MoS 2 monolayer-on-silica substrate determined by scanning thermal microscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2022

Thermal boundary conductance of CVD-grown MoS 2 monolayer-on-silica substrate determined by scanning thermal microscopy

Résumé

We characterize heat dissipation of supported molybdenum disulfide (MoS 2 ) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of the MoS 2 monolayers in contact with 300 nm of SiO 2 is around 4.6 ± 2 MW m −2 K −1 . This value is in the low range of the values determined for exfoliated flakes with other techniques such as Raman thermometry, which span an order of magnitude (0.44–50 MW m −2 K −1 ), and underlines the dispersion of measurements. The sensitivity to the in-plane thermal conductivity of supported MoS 2 is very low, highlighting that the thermal boundary conductance is the key driver of heat dissipation for the MoS 2 monolayer when it is not suspended. In addition, this work also demonstrates that SThM calibration using different thicknesses of SiO 2 , initially aimed at being used with bulk materials can be extended to 2D materials.
Fichier principal
Vignette du fichier
Paper and Suppl.pdf (1.88 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03740535 , version 1 (29-07-2022)

Identifiants

Citer

Christian Mateo Frausto-Avila, Victor Arellano-Arreola, Jose Martin Yañez Limon, Andres de Luna-Bugallo, Séverine Gomès, et al.. Thermal boundary conductance of CVD-grown MoS 2 monolayer-on-silica substrate determined by scanning thermal microscopy. Applied Physics Letters, 2022, 120 (26), pp.262202. ⟨10.1063/5.0092553⟩. ⟨hal-03740535⟩
23 Consultations
12 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More