A fast model of radiation-induced electron trapping in CCDs for implementation in the Gaia data processing
Résumé
The European Space Agency's Gaia mission1 is scheduled for launch in 2012. It will operate at L2 for 5 years, rotating slowly so that its two optical telescopes will repeatedly observe more than one billion stars. The resulting data set will be iteratively reduced to solve for the relative position, parallax-distance and proper motion of every observed star, yielding a three dimensional dynamical model of our galaxy. The focal plane contains 106 large area silicon CCDs continuously operating in TDI mode at a line rate synchronised with the satellite rotation.2 One of the greatest challenges facing the mission is radiation damage in the CCDs which will cause charge loss and image distortion. This is particularly severe because the large focal plane is difficult to shield and because the launch will coincide with solar maximum. Despite steps taken to minimize the effects of radiation (e.g. regular use of charge injection), the residual distortion will need to be calibrated during the pipeline data processing. Due to the volume of data involved, this requires a trapping model which is physically realistic, yet fast enough and simple enough to implement in the pipeline. The current prototype Charge Distortion Model will be presented. This model was developed specifically for Gaia in TDI mode. However, an imaging mode version has already been applied to other missions, for example, to indicate the potential impact of radiation damage on the proposed Euclid mission.