Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity
Abstract
The synthesis of sub-8 nm HZO films that exhibit robust ferroelectricity is a challenging task. Interface engineering is a promising method to improve the electrical performances and the scalability of HZO-based devices. In this work, we propose a comparative study of 6 nm HZO-based ferroelectric tunnel junctions with enhanced ferroelectricity, which will be considered for the demonstration of synaptic learning mechanisms for neuromorphic applications.