Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering
Résumé
We report the fabrication of two samples deposited by magnetron sputtering with different nanostructures: mesa (M) and non-mesa(NM). Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. Retention is also modulated by the nanostructuration.