The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC
Résumé
In this paper negative temperature coefficient of the 6H-SiC diode breakdown voltage is considered. It is shown that the temperature dependence of the breakdown voltage value can be explained in terms of recharging of deep centers in the space charge region of the diode. Experiments made with boron doped 6H-SiC diodes are in good agreement with calculation.
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
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