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Article Dans Une Revue Materials Science Forum Année : 2022

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Résumé

An optimized termination extension tutorial is reported for a small area (≈ 1mm 2 ) 4H-SiC NPN BJT. The extension system is based on a parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field on the base-drift junction, and (3) blocking the electric field from reaching border structure are investigated. A breakdown voltage greater than 10 kV is recorded, when drift region is n-doped to 8x10 14 cm-3.
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Dates et versions

hal-03703994 , version 1 (24-06-2022)

Identifiants

Citer

Ali Ammar, Luong Viêt Phung, Dominique Planson, Hervé Morel, Camille Sonneville. Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs. Materials Science Forum, 2022, 1062, pp.613-618. ⟨10.4028/p-vms03o⟩. ⟨hal-03703994⟩
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