Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
Résumé
An optimized termination extension tutorial is reported for a small area (≈ 1mm 2 ) 4H-SiC NPN BJT. The extension system is based on a parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field on the base-drift junction, and (3) blocking the electric field from reaching border structure are investigated. A breakdown voltage greater than 10 kV is recorded, when drift region is n-doped to 8x10 14 cm-3.
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