Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs
Mohammad Abdul Alim
- Fonction : Auteur
- PersonId : 805455
- ORCID : 0000-0002-3984-0176
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Résumé
The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise equivalent resistance Rs, and association gain Ga were modelled at various frequencies and temperatures. The temperature coefficients of noise-related equivalent circuit parameters (ECPs) were also determined. The noise parameters of GaN on SiC based HEMTs are considered to be analogous to GaN HEMTs on Si, sapphire, and diamond substrates, as well as InP- and GaAs HEMTs. According to the findings, GaN/SiC HEMTs offer a lot of potential for applications requiring LNAs at high temperatures.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Communication dans un congrès |
Titre |
en
Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs
|
Résumé |
en
The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise equivalent resistance Rs, and association gain Ga were modelled at various frequencies and temperatures. The temperature coefficients of noise-related equivalent circuit parameters (ECPs) were also determined. The noise parameters of GaN on SiC based HEMTs are considered to be analogous to GaN HEMTs on Si, sapphire, and diamond substrates, as well as InP- and GaAs HEMTs. According to the findings, GaN/SiC HEMTs offer a lot of potential for applications requiring LNAs at high temperatures.
|
Auteur(s) |
Mohammad Abdul Alim
1
, Ali A Rezazadeh
2
, Christophe Gaquière
3, 4
1
University of Chittagong, Bangladesh
( 1091353 )
- Bangladesh
2
University of Manchester [Manchester]
( 121172 )
- Oxford Rd, Manchester M13 9PL
- Royaume-Uni
3
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
4
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
|
Langue du document |
Anglais
|
Source |
Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Actes |
Oui
|
Page/Identifiant |
606-609
|
Titre du congrès |
2022 International Conference on Innovations in Science, Engineering and Technology (ICISET)
|
Date début congrès |
2022-02-26
|
Date fin congrès |
2022-02-27
|
Ville |
Chittagong
|
Pays |
Bangladesh
|
Domaine(s) |
|
Éditeur commercial |
|
Financement |
|
Référence interne |
|
DOI | 10.1109/ICISET54810.2022.9775920 |
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