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Communication Dans Un Congrès Année : 2022

Towards 500GHz Non-Volatile Monolayer 6G Switches

Deji Akinwande

Résumé

High performance non-volatile analog switches based on monolayer MoS₂ are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS₂ enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS₂ switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10× higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.
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Dates et versions

hal-03698147 , version 1 (17-06-2022)

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Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, P. Szriftgiser, Sung Jin Yang, et al.. Towards 500GHz Non-Volatile Monolayer 6G Switches. 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. pp.902-905, ⟨10.1109/IMS37962.2022.9865419⟩. ⟨hal-03698147⟩
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