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Communication Dans Un Congrès Année : 2022

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

Résumé

A new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate. Simulation results are presented by focusing on the physical and geometrical parameters of the P-GaN wells. The normally-off behavior of the novel HEMT is demonstrated.
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Dates et versions

hal-03697713 , version 1 (17-06-2022)

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Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, et al.. Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. 29th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2022), Jun 2022, Wroclaw, Poland. ⟨10.23919/MIXDES55591.2022.9838389⟩. ⟨hal-03697713⟩
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