Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs
Résumé
A new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate. Simulation results are presented by focusing on the physical and geometrical parameters of the P-GaN wells. The normally-off behavior of the novel HEMT is demonstrated.
Fichier principal
2022_05_13+Daniel+ROULY_LAAS_CNRS+final+paper.pdf (2.41 Mo)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)