Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination

Résumé

We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-03692168

Soumis le : jeudi 9 juin 2022-15:37:10

Dernière modification le : mardi 4 juin 2024-13:26:03

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Dates et versions

hal-03692168 , version 1 (09-06-2022)

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Citer

Maximilien Billet, Yann Desmet, Fuanki Bavedila, Guillaume Ducournau, Stefano Barbieri, et al.. Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination. 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259323, ⟨10.1109/IRMMW-THz.2017.8066941⟩. ⟨hal-03692168⟩

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