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Communication Dans Un Congrès Année : 2017

Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Résumé

We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.
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Dates et versions

hal-03692145 , version 1 (09-06-2022)

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Maximilien Billet, Yann Desmet, Christophe Coinon, Guillaume Ducournau, X. Wallart, et al.. Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications. 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259249, ⟨10.1109/IRMMW-THz.2017.8067020⟩. ⟨hal-03692145⟩
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