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Journal Articles Microelectronics Reliability Year : 1998

Hot-carrier injections in SiO2


We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.
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hal-03689822 , version 1 (07-06-2022)



D Vuillaume, Alain Bravaix, D Goguenheim. Hot-carrier injections in SiO2. Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩. ⟨hal-03689822⟩
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