4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method
Résumé
This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of the device #1, a polyimide layer was deposited during the fabrication process. On the contrary, passivation layer was removed on device #2. Thanks to the micro-OBIC micrometer spatial resolution and the spot size was carefully focused, small gaps in the range of 1 μm can be visible on OBIC profiles. Thus, the variation of the μ-obic accurately reflects the topology of each ring.
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