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Article Dans Une Revue Journal of Magnetism and Magnetic Materials Année : 2007

Evidence for gap anisotropy in

J. Derr
G. Knebel
G. Lapertot
B. Salce
  • Fonction : Auteur
J. Flouquet
  • Fonction : Auteur

Résumé

Resistivity measurements under uniaxial stress have been performed on the intermediate valence compound SmB6 for various directions of the crystal. The experimental technique allows us to explore a limited pressure area (basically 0-3 kbar). Nevertheless, the results clearly show an anisotropy; indeed, the effect of the stress in the decrease of the residual resistivity is much higher in the < 111 > direction than in the < 100 > and the < 110 > orientations. This change is witness to the gap anisotropy which must be linked to the theory of excitonic semiconductors.

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hal-03687496 , version 1 (03-06-2022)

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J. Derr, G. Knebel, G. Lapertot, B. Salce, S. Kunii, et al.. Evidence for gap anisotropy in. Journal of Magnetism and Magnetic Materials, 2007, 310 (2), pp.560-562. ⟨10.1016/j.jmmm.2006.10.150⟩. ⟨hal-03687496⟩
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