Ru plasma etching process for thermally stable and low resistivity contacts - Archive ouverte HAL
Communication Dans Un Congrès Année : 2021

Ru plasma etching process for thermally stable and low resistivity contacts

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hal-03686953 , version 1 (03-06-2022)

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  • HAL Id : hal-03686953 , version 1

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Mohamed Najah, Mark Ferguson, Mohamed Boucherit, M Guillemain, Jacques Renaud, et al.. Ru plasma etching process for thermally stable and low resistivity contacts. 47th International Conference on Micro and Nano Engineering,, Jun 2021, Torino, Italy. ⟨hal-03686953⟩
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