HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS - Archive ouverte HAL
Journal Articles Microelectronics Reliability Year : 1998

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

Abstract

AC stressing is investigated to determine the hot-carrier reliability in a 0.5 μm CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of the propagation time and geometry. It is shown that device degradation may exhibit in some cases a strong dependence on the propagation time and clearly differs from the simple case of inverter operation.

Dates and versions

hal-03674496 , version 1 (20-05-2022)

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Cite

D Goguenheim, Alain Bravaix, Dominique Vuillaume, M Varrot, N Revil, et al.. HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS. Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩. ⟨hal-03674496⟩
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