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Communication Dans Un Congrès Année : 2021

Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3 rd -Order Intermodulation Distortion

Résumé

The third-order intermodulation distortion in AlGaN/GaN high electron mobility transistors fabricated on SiC substrate for power amplifier applications is reported in this study as a function of bias and temperature. The nonlinearity of active devices in terms of frequency and input power was demonstrated using two-tone intermodulation distortion measurements with a wide bias and temperature range. It is shown that the second derivatives of RF transconductance (Gm3) determined from two-tone measurements are directly related to the third-order intermodulation distortion (IMD) components. Furthermore, the third-order intermodulation distortion power was found to be minimum at the value of Gm3 is zero. An empirical analytical model for the nonlinearity of this device based on two-tone technique has been developed to highlight the influence of RF transconductance. The modelled data are shown to be consistent with measurement results giving a useful tool for studying these devices.
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Dates et versions

hal-03663718 , version 1 (10-05-2022)

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Mohammad Alim, I. Jahan, Mayahsa Ali, Christophe Gaquière. Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3 rd -Order Intermodulation Distortion. 2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI), Dec 2021, Dhaka, Bangladesh. pp.1-4, ⟨10.1109/STI53101.2021.9732585⟩. ⟨hal-03663718⟩
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