Nano-composite MOx materials for NVMs - Archive ouverte HAL
Chapitre D'ouvrage Année : 2022

Nano-composite MOx materials for NVMs

Etienne Talbot

Résumé

In this chapter, we will present a digest of the main materials science aspects of the controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal oxide high-κ dielectric layers by using two promising techniques, namely magnetron-sputtering and Ultra Low Energy-Ion Beam Synthesis. In particular, the phase separation process as well as the problems related to humidity penetration or controlled oxidation processes are among the discussed topics. The different state-of-the-art tools for structural characterization will also be described. Finally, the associated electrical characterizations will be presented in order to evaluate the potential of such nanocomposite metal oxide layers for NC memory applications.

Dates et versions

hal-03661308 , version 1 (06-05-2022)

Identifiants

Citer

Caroline Bonafos, L. Khomenkhova, F. Gourbilleau, Etienne Talbot, Abdelilah Slaoui, et al.. Nano-composite MOx materials for NVMs. Metal Oxides for Non-volatile Memory, chapitre 7, Elsevier, pp.201-244, 2022, ⟨10.1016/B978-0-12-814629-3.00007-6⟩. ⟨hal-03661308⟩
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