Simulation and design of junction termination structures for diamond Schottky diodes
Résumé
In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semiresistive materials was carried out. Several results from simulations of P type Schottky diodes protected by MESA coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures.
Domaines
Energie électriqueOrigine | Fichiers produits par l'(les) auteur(s) |
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