Simulation and design of junction termination structures for diamond Schottky diodes - Archive ouverte HAL
Communication Dans Un Congrès Année : 2010

Simulation and design of junction termination structures for diamond Schottky diodes

Résumé

In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semiresistive materials was carried out. Several results from simulations of P type Schottky diodes protected by MESA coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures.
Fichier principal
Vignette du fichier
article_DRM2010_final.pdf (975.33 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03656932 , version 1 (02-05-2022)

Identifiants

  • HAL Id : hal-03656932 , version 1

Citer

Fabien Thion, Karine Isoird, Dominique Planson, M-L Locatelli, H Ding. Simulation and design of junction termination structures for diamond Schottky diodes. European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary. ⟨hal-03656932⟩
37 Consultations
37 Téléchargements

Partager

More