Quantum well width and barrier thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Quantum well width and barrier thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

Résumé

In this study, we theoretically investigated the electronic properties of resonant tunneling diodes (RTDs) grown along the polar and non-polar orientations by using the self-consistent solution of the coupled Schrödinger and Poisson equations. Based on the transfer matrix formalism, the effects of the geometrical parameters on the current-voltage characteristics of Al0.2Ga0.8N/GaN RTDs we analyzed by varying GaN well width and Al0.2Ga0.8N/GaN barrier thicknesses. The results show that the characteristics of polar and nonpolar Al0.2Ga0.8 N/GaN RTD strongly depend on the barrier and well size; showing a strong decrease in peak and valley current density and a large PVR enhancement when increasing well and barrier thickness. To bring interesting RTD electrical characteristics, a comparison between the polar and non-polar Al0.2 Ga0.8N/GaN RTD was performed. non-polar oriented RTDs show better electronic characteristics, including higher peak current density (Jpeak), smaller peak voltage (Vpeak), and greater pic-to-valley ratio (PVR), than polar ones.
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hal-03656141 , version 1 (01-05-2022)

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  • HAL Id : hal-03656141 , version 1

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Nafaa Kacem, Amel Bhouri, J.-L. Lazzari, Nejeh Jaba. Quantum well width and barrier thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes. 2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS), Jun 2021, Sfax, Tunisia. ⟨hal-03656141⟩
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