Robust automotive products in advanced CMOS nodes - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

Robust automotive products in advanced CMOS nodes

Résumé

In this work, additional elements needed on top of conventional foundry reliability knowledge to enable robust automotive products in compliance with all restrictive norms are introduced. For intrinsic reliability, the main element is the reliability models (a design compatible WLR description). Their usage for design margins definition and their thorough validation at IP level is described. For extrinsics failure, two different screening procedures, Vstress and Burn-In (conventional or wafer-level), are here well documented and in use for volume production to bring the failure rate level down below 1ppm automotive target. Altogether, the global approach developed in ST Microelectronics enable robust automotive products based on controlled and validated procedures.
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Dates et versions

hal-03654298 , version 1 (28-04-2022)

Identifiants

Citer

Alain Bravaix, V. Huard, S. Mhira, M. de Tomasi, E. Trabace, et al.. Robust automotive products in advanced CMOS nodes. 2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.3A-2.1-3A-2.7, ⟨10.1109/IRPS.2017.7936277⟩. ⟨hal-03654298⟩
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