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Article Dans Une Revue APL Materials Année : 2022

Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3

Sushrut Modak
Leonid Chernyak
Yves Dumont
Fan Ren

Résumé

Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.
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hal-03642670 , version 1 (27-04-2022)

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Sushrut Modak, Leonid Chernyak, Alfons Schulte, Corinne Sartel, Vincent Sallet, et al.. Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3. APL Materials, 2022, 10 (3), pp.031106. ⟨10.1063/5.0086449⟩. ⟨hal-03642670⟩
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