Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz
Caroline Maye
(1, 2)
,
Sylvie Lepilliet
(1, 3)
,
Etienne Okada
(3, 1)
,
E. Brezza
(4)
,
A. Gauthier
(4)
,
M. Margalef-Rovira
(1)
,
D. Gloria
(4)
,
Guillaume Ducournau
(1, 5)
,
Christophe Gaquière
(1, 2)
Caroline Maye
- Fonction : Auteur
- PersonId : 1121639
Sylvie Lepilliet
- Fonction : Auteur
- PersonId : 745478
- IdHAL : sylvie-lepilliet
Etienne Okada
- Fonction : Auteur
- PersonId : 745489
- IdHAL : etienne-okada
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Résumé
In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device sizes were designed and characterized up to their saturation region. This was possible thanks to a power setup which offers an available input power up to 13.9 dBm at 185 GHz. An innovative integrated tuner was also designed with each transistor to vary the load at the on-wafer output DUT plane. The output power, power gain and power added efficiency are finally extracted under different load conditions. An output power of 11.3 dBm ± 0.5 dB is reached for the larger effective emitter area that is 1.112μm 2 .
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Communication dans un congrès |
Résumé |
en
In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device sizes were designed and characterized up to their saturation region. This was possible thanks to a power setup which offers an available input power up to 13.9 dBm at 185 GHz. An innovative integrated tuner was also designed with each transistor to vary the load at the on-wafer output DUT plane. The output power, power gain and power added efficiency are finally extracted under different load conditions. An output power of 11.3 dBm ± 0.5 dB is reached for the larger effective emitter area that is 1.112μm 2 .
|
Titre |
en
Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz
|
Auteur(s) |
Caroline Maye
1, 2
, Sylvie Lepilliet
1, 3
, Etienne Okada
3, 1
, E. Brezza
4
, A. Gauthier
4
, M. Margalef-Rovira
1
, D. Gloria
4
, Guillaume Ducournau
1, 5
, Christophe Gaquière
1, 2
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
3
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
4
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
5
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067488 )
- Groupe Photonique THz - IEMN UMR8520 - (Terahertz Photonics)
- France
|
Actes |
Oui
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Date début congrès |
2022-04-03
|
Date fin congrès |
2022-04-04
|
Ville |
London
|
Pays |
Royaume-Uni
|
URL du congrès ou éditeur |
https://www.eumw2021.com/conferences/conference.html?id=5
|
Titre du congrès |
16th European Microwave Integrated Circuits Conference, EuMIC 2021
|
Commentaire |
Session EuMIC01 - Large Signal and Non-linear Charaterization Techniques
|
Collaboration/Projet |
|
Référence interne |
|
Domaine(s) |
|
Mots-clés |
en
Millimeter wave, load-pull measurement, integrated tuner, SiGe bipolar transistor, BiCMOS055
|
DOI | 10.23919/EuMIC50153.2022.9783811 |
UT key WOS | 000838710900001 |
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