Abstract Electron beam pumping is a promising technique to fabricate compact and efficient light emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic due doping, transport and contacting issues. Interest in this technology has increased in recent years, particularly driven by the demand for ultraviolet sources and the difficulties in developing efficient AlGaN devices to cover the spectral range of 220-350 nm. The use of a highly energetic electron beam enables the semiconductor structure to be pumped without the need for doping or contacting. The active volume is defined by the accelerating voltage, which allows the homogeneous excitation of a large active volume. The efficiency of cathodoluminescent lamps can compete and even outperform LEDs in the deep ultraviolet window, and lasers can deliver high optical power (up to around 100 W). Here, we analyze the advantages and challenges of this technology platform, and discuss its potential applications.