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                <term xml:lang="en">p-i-n diode</term>
                <term xml:lang="en">reverberation chamber</term>
                <term xml:lang="en">shielding effectiveness</term>
                <term xml:lang="en">optical transparency</term>
                <term xml:lang="en">micrometric mesh metal film</term>
                <term xml:lang="en">high-intensity radiated fields (HIRFs)</term>
                <term xml:lang="en">Electromagnetic shielding</term>
                <term xml:lang="en">Wires</term>
                <term xml:lang="en">Impedance</term>
                <term xml:lang="en">Radio frequency</term>
                <term xml:lang="en">Transmission line measurements</term>
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              <p>This article presents the design, fabrication, and characterization of an active electromagnetic shield intended to dynamically protect optical and electromagnetic sensors against high intensity radiated fields. The shield exhibits high and constant optical transparency level over the entire visible light spectrum thanks to a micrometric mesh metal thin film printed on a glass substrate. The central micrometric mesh area is separated from the peripheral ground plane of the shield by a peripheral slot. This slot is fitted out with p-i-n diodes and resistors, connecting electrically the central micrometric mesh area and the ground plane. The aim of these components is to dynamically control the shielding effectiveness of the screen, by using the conducting (ON) or blocking (OFF) states of the p-i-n diodes. Accordingly, the shielding effectiveness can be set at high level to protect the system against high intensity radiated fields, and conversely at low level to both prevent system electromagnetic self-perturbation and increase the sensitivity of the internal electromagnetic sensors. Dynamic control of the shielding effectiveness of the fabricated screen, whose optical transparency is close to 85% over the entire visible light spectrum, is fully demonstrated. A shielding effectiveness contrast ranging from 5 dB to 24 dB between the ON and OFF diode states was measured in the 2-10.5 GHz frequency range in a reverberation chamber.</p>
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