Recent achievements of the ATLAS upgrade Planar Pixel Sensors R&D project
Résumé
In the context of the HL-LHC upgrade of the ATLAS experiment, the introduction of a highly segmented radiation hard siliconized inner tracker is envisaged to cope with highly granularity. The Planar Pixel Sensors (PPS) collaboration, comprising of institutes from 16 countries, was established to investigate the transposability of already proven planar pixel technology to those harsh requirements. Introducing a comprehensive approach, state-of-the-art achievements in several scopes are presented: novice designs, including bias rail rerouting, active edge technologies and enlarged pixel implementations, 3D TCAD doping profile simulations in conjunction with secondary ion mass spectroscopy measurements, slim sensor productions eliminating support wafers as well as large area devices, Ni-Au under-bump metallisation effects as well as hybridization efforts, data acquisition systems developments and irradiation results from recent test beams. Presented results form a synthetic approach, providing insight in contemporary developments and open subjects with respect to silicon particle detectors.
Mots clés
Semiconductor process modeling
Silicon
Detectors
Radiation effects
Semiconductor device modeling
Large Hadron Collider
technology CAD (electronics)
data acquisition
doping profiles
metallisation
secondary ion mass spectroscopy
silicon radiation detectors
Si
ATLAS Upgrade Planar Pixel Sensors R&
D Project
planar pixel sensors collaboration
3D TCAD doping profile simulations
underbump metallisation effects
hybridization
data acquisition systems
silicon particle detectors
ATLAS
LHC
silicon sensors
planar pixels
radiation hard detectors
activity report
radiation: damage
semiconductor detector: pixel
semiconductor detector: technology
tracking detector: upgrade
irradiation
numerical calculations